fds6630a fds6630a rev. c1 fds6630a n-channel logic level powertrench tm mosfet general description this n-channel logic level mosfet is produced using fairchild semiconductor's advanced powertrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. these devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. applications ? dc/dc converter ? load switch ? motor drives april 1999 features ? 6.5 a, 30 v. r ds(on) = 0.038 w @ v gs = 10 v r ds(on) = 0.053 w @ v gs = 4.5 v ? low gate charge (5nc typical). ? fast switching speed. ? high performance trench technology for extremely low r ds(on) . ? high power and current handling capability. ? 1999 fairchild semiconductor corporation absolute maximum ratings t a = 25c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d drain current - continuous (note 1a) 6.5 a - pulsed 40 p d power dissipation for single operation (note 1a) 2.5 w (note 1b) 1.2 (note 1c) 1 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a) 50 c/w r q jc thermal resistance, junction-to-case (note 1) 25 c/w package outlines and ordering information device marking device reel size tape width quantity fds6630a fds6630a 13 12mm 2500 units s d s s so-8 d d d g pin 1 6 7 8 5 3 2 1 4
fds6630a fds6630a rev. c1 electrical characteristics t a = 25c unless otherwise noted s y mbol parameter test conditions min t yp max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 m a30 v d bv dss d t j breakdown voltage temperature coefficient i d = 250 m a, referenced to 25 c24mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 m a i gssf gate-body leakage current, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate-body leakage current, reverse v gs = -20 v, v ds = 0 v -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 m a11.73v d v gs(th) d t j gate threshold voltage temperature coefficient i d = 250 m a, referenced to 25 c-4mv/ c r ds(on) static drain-source on-resistance v gs = 10 v, i d = 6.5 a v gs = 10 v, i d = 6.5 a, t j =125 c v gs = 4.5 v, i d = 5.5 a 0.028 0.044 0.040 0.038 0.060 0.053 w i d(on) on-state drain current v gs = 10 v, v ds = 5 v 20 a g fs forward transconductance v ds = 5 v, i d = 6.5 a 13 s dynamic characteristics c iss input capacitance 460 pf c oss output capacitance 115 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 45 pf switching characteristics (note 2) t d(on) turn-on delay time 5 11 ns t r turn-on rise time 8 17 ns t d(off) turn-off delay time 17 28 ns t f turn-off fall time v dd = 15 v, i d = 1 a, v gs = 10 v, r gen = 6 w 13 24 ns q g total gate charge 5 7 nc q gs gate-source charge 2 nc q gd gate-drain charge v ds = 5 v, i d = 6.5 a, v gs = 5 v 0.9 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 2.1 a v sd drain-source diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.8 1.2 v notes: 1: r q ja is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mou nting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. scale 1 : 1 on letter size paper 2: pulse test: pulse width 300 m s, duty cycle 2.0% a) 50 c/w when mounted on a 1 in 2 pad of 2 oz. copper. b) 105 c/w when mounted on a 0.04 in 2 pad of 2 oz. copper. c) 125 c/w on a 0.006 in 2 pad of 2 oz. copper.
fds6630a fds6630a rev. c1 typical characteristics figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 012345 0 5 10 15 20 25 30 35 40 v , drain-source voltage (v) i , drain-source current (a) v =10v gs 3.5v 3.0v 2.5v 6.0v 4.5v ds d 4.0v 5.0v 010203040 0.8 1 1.2 1.4 1.6 1.8 2 2.2 i , drain current (a) drain-so urce on-resistance v = 3.5v gs 7. 0v 6. 0v 4. 5v d 10v 4. 0v r , nor m aliz ed ds (o n) 5. 0v -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 t , junction temperature (c) drain-source on-resistance j v = 10 v gs i = 6.5 a d r , normalized ds(on) 246810 0 0.02 0.04 0.06 0.08 0.1 0.12 v , gate to source voltage (v) gs r , on-resistance (ohm) ds(on) t = 25c a i = 3.3 a d t = 125c a 123456 0 5 10 15 20 25 30 v , gate to source voltage (v) i , drain current (a) 25c 125c v = 5v ds d t = -55c a gs 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.0001 0.001 0.01 0.1 1 10 40 v , body diode forward voltage (v) i , reverse drain current (a) t = 125c a 25c -55c v = 0v gs sd s figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage.
fds6630a fds6630a rev. c1 typical characteristics (continued) 0.1 0.2 0.5 1 2 5 10 30 50 100 200 500 1000 v , drain to source voltage (v) capacitance (pf) ds c iss f = 1 mhz v = 0 v gs c oss c rss figure 7. gate-charge characteristics. figure 8. capacitance characteristics. figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient themal response will change depending on the circuit board design. 0246810 0 2 4 6 8 10 q , ga te charge (nc) v , g ate - sou r c e v ol tag e (v ) g gs i = 6.5a d v = 5 v ds 10 v 15 v 0.1 0.3 1 3 10 30 50 0.01 0.1 1 10 100 v , drain-source voltage (v) i , drain current (a) ds d rds(on) limit v = 1 0v sin gl e pu lse r =125c/w t = 25c gs a q ja dc 1s 10ms 10 0ms 10s 1ms 10 0us 0.0001 0. 001 0.01 0.1 1 10 100 300 0. 001 0. 002 0. 005 0. 0 1 0. 0 2 0. 0 5 0.1 0.2 0.5 1 t , ti me (s e c) tr ansi ent t h er mal resistanc e r(t), norm alized effective 1 s i n g l e p u l s e d = 0. 5 0. 1 0. 05 0. 02 0. 0 1 0.2 d u t y c y c l e, d = t /t 1 2 r (t) = r(t) * r r = 125c / w q ja q ja q ja t - t = p * r (t ) q ja a j p(p k ) t 1 t 2 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 single pulse time (sec) power (w) single pulse r q ja = 125 o c/w t a = 25 o c
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